Boron Nitride (BN) Sputtering Targets

Boron nitride (BN) is a III-V compound semiconductor material with a wide bandgap and unique electronic and optical properties. It can exist in different crystalline forms, including hexagonal (h-BN) and cubic (c-BN) structures, each with distinct characteristics. BN thin films can be deposited using techniques like chemical vapor deposition or sputtering, enabling their integration into electronic and optoelectronic devices. The materials thermal and chemical stability, high electrical resistivity, and excellent dielectric properties make it suitable for use as a gate dielectric, passivation layer, and insulating substrate in semiconductor devices. BNs potential applications include power electronics, high-frequency electronics, and deep-ultraviolet optoelectronics.

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