Zirconium Silicide (ZrSi2) Sputtering Target

Zirconium Silicide (ZrSi2) Sputtering Target

Catalog Number:
ST01502712QSA
Mfr. No.:
DPSI40ST
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      • Overview
        • Sputtering technique are frequently used to create a thin film of Zirconium Silicide. The ZrSi2 target material is placed on the electrode in the sputteringchamber. Heavy ion particle or laser are frequently used to ejecting coatingmaterial from the target, made by Zirconium Silicide in this case, to create athin film of ZrSi2 on the surface of the substrate.

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      • Properties
        • Categories
          High Purity Materials
          CAS Number
          264124-92-7
          Molecular Formula
          ZrSi2
          Other Properties
          Composition: ZrSi2
          Purity: 99.9%
          Max. dia. of flat disc sputter target: 12"
          Typical lead time of ZrSi2 sputtering target: 4 weeks

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