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Arsenic Telluride (As2Te3) Sputtering Targets

Arsenic Telluride (As2Te3) Sputtering Targets

Catalog Number:

ST01502643QSA

Mfr. No.:

DPTE33ST

Price:

$1,080

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- Overview
  - Arsenic telluride is a semiconductor material with a narrow bandgap, making it suitable for infrared optoelectronic applications. It has a high optical absorption coefficient and a tunable bandgap, allowing for the development of infrared photodetectors, light-emitting diodes, and laser diodes. As2Te3 also exhibits excellent thermoelectric properties, which can be exploited for energy harvesting and temperature sensing applications. The materials potential in phase-change memory and optoelectronic integrated circuits has been explored due to its rapid and reversible phase-change behavior.
    
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- Properties
  - Categories
    
    Deposition Materials
    
    CAS Number
    
    12006-25-8
    
    Molecular Formula
    
    As2Te3
    
    Other Properties
    
    Composition: As2Te3
    Purity: 99.5%
    
    Max. dia. of flat disc sputter target: 12"
    Typical lead time of As2Te3 sputtering target: 4 weeks

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