Arsenic Telluride (As2Te3) Sputtering Targets

Arsenic Telluride (As2Te3) Sputtering Targets

Catalog Number:
ST01502643QSA
Mfr. No.:
DPTE33ST
Price:
$1,080
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      • Overview
        • Arsenic telluride is a semiconductor material with a narrow bandgap, making it suitable for infrared optoelectronic applications. It has a high optical absorption coefficient and a tunable bandgap, allowing for the development of infrared photodetectors, light-emitting diodes, and laser diodes. As2Te3 also exhibits excellent thermoelectric properties, which can be exploited for energy harvesting and temperature sensing applications. The materials potential in phase-change memory and optoelectronic integrated circuits has been explored due to its rapid and reversible phase-change behavior.

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      • Properties
        • Categories
          Deposition Materials
          CAS Number
          12006-25-8
          Molecular Formula
          As2Te3
          Other Properties
          Composition: As2Te3
          Purity: 99.5%

          Max. dia. of flat disc sputter target: 12"
          Typical lead time of As2Te3 sputtering target: 4 weeks

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