Thulium (Tm) Sputtering Targets

Thulium's unique properties, including its electrical conductivity and stability, have led to its exploration in the field of semiconductor thin films. Thulium oxide (Tm2O3) thin films have shown promise in various semiconductor applications. The process of depositing thulium oxide thin films is usually sputtering. In this process, a thulium or Tm2O3 sputtering target is placed in the sputtering chamber as the source material. High-energy ions are used to eject atoms or molecules from the target, then the thulium in the chamber condense onto the substrate surface to form the thin film. This method allows for precise control over film thickness, uniformity, and composition, ensuring consistent performance across the semiconductor device.

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