Tantalum Nitride (TaN) Sputtering Targets

Tantalum nitride (TaN) utilizes unique optical and electrical properties in integrated circuits and optoelectronics. Specifically, TaN commonly functions as a conductive barrier layer in IC manufacturing. This prevents diffusion between metal layers, thereby enhancing device performance.
Additionally, TaN can serve as a barrier layer or electrode material in other components. For example, it sees use in photovoltaic cells, light-emitting diodes, and sensors. Furthermore, the sputtering technique frequently deposits TaN in these applications. During sputtering, tantalum metal may act as the target material within a nitrogen atmosphere.
However, employing tantalum nitride targets directly yields superior results. Sputtering from TaN targets provides better control and uniformity compared to reactive sputtering from tantalum in nitrogen gas. As a result, TaN sputtering targets see greater demand for depositing films accurately composed of tantalum nitride.

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