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Overview
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Sputtering technique are frequently used to create the thin film of Silicon Carbide . The SiC target material is placed on the electrode in the sputtering chamber. Heavy ion particle or laser are frequently used to ejecting coating material from the target, made by Silicon Carbide in this case, to create a thin film of SiC on the surface of the substrate. As silicon carbide is an electric insulator, usually people don't use DC sputtering for this type of target material.
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