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Overview
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The combination of Zinc Oxide (ZnO) and Gallium Oxide (Ga2O3) results in a heterostructure with enhanced electronic and optical properties, useful in ultraviolet photodetectors, power electronics, and transparent conductive oxides. ZnO provides high electron mobility and ultraviolet emission, while Ga2O3 offers a wide bandgap and high breakdown voltage. Thin films of ZnO/Ga2O3 can be deposited using sputtering techniques to create efficient devices for high-voltage applications and UV detection.
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- Properties
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Overview