Hafnium Oxide (HfO2) Sputtering Targets

Hafnium Oxide (HfO2) Sputtering Targets

Catalog Number:
ST01502742QSA
Mfr. No.:
DPOX72ST
Price:
$842
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      • Overview
        • Hafnium Dioxide (HfO2) is a high-k dielectric material widely used in semiconductor devices to improve the performance of transistors and capacitors. It helps reduce power consumption and increase device scaling. Thin films of HfO2 are typically deposited using atomic layer deposition (ALD) or sputtering, enabling the production of high-performance electronic components.

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      • Properties
        • Categories
          High Purity Materials
          CAS Number
          12055-23-1
          Molecular Formula
          HfO2
          Other Properties
          Composition: Hafnium Oxide (HfO2)
          Purity: 99.9% ~ 99.99%
          Max. dia. of flat disc sputter target: 18"
          Typical lead time of HfO2 sputtering target: 3 weeks

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