Chromium Doped Silicon Monoxide (Cr-SiO) Sputtering Targets

Chromium Doped Silicon Monoxide (Cr-SiO) Sputtering Targets

Catalog Number:
ST01502737QSA
Mfr. No.:
DPOX24ST-1
Price:
$842
  • Size:
    Quantity:
    Add to Cart:
      • Overview
        • Silicon monoxide (SiO) is a semiconductor material with a wide bandgap and unique optical properties. It can be used as a dielectric or insulating layer in various electronic and optoelectronic devices, such as thin-film transistors, integrated circuits, and solar cells. SiO exhibits good thermal stability, chemical resistance, and electrical insulating properties, making it suitable for use as a passivation layer, gate dielectric, or barrier material. The material can be deposited as thin films using techniques like sputtering or thermal evaporation, allowing for its integration into semiconductor fabrication processes. SiOs optical transparency and refractive index also make it useful in optical coatings and waveguide applications.

          Please contact us at for specific academic pricing.

      • Properties
        • Categories
          High Purity Materials
          Molecular Formula
          Cr-SiO
          Other Properties
          Composition: Silicon Monoxide (Cr-SiO)
          Purity: 99.9% ~ 99.99%
          Max. dia. of flat disc sputter target: 18"
          Typical lead time of Cr-SiO sputtering target: 4 weeks

    Documents

    Datasheet

    Note: If you don't receive our verification email, do the following:

    Copyright © Amerigo Scientific. All rights reserved.