Bismuth Titanate (Bi4Ti3O12) Sputtering Targets

Bismuth Titanate (Bi4Ti3O12) Sputtering Targets

Catalog Number:
ST01502719QSA
Mfr. No.:
DPOX83ST-3
Price:
$857
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      • Overview
        • Bi4Ti3O12 (BIT) is a layered perovskite-like oxide material that exhibits ferroelectric and piezoelectric properties. It has a high Curie temperature, large remanent polarization, and good piezoelectric response, making it suitable for use in non-volatile memory, sensors, and actuator applications. BIT thin films can be deposited using techniques like sputtering, enabling their integration with semiconductor processing and the development of integrated ferroelectric and piezoelectric device components. The ability to engineer the microstructure and composition of BIT allows for the optimization of its ferroelectric and piezoelectric characteristics for various electronic and electromechanical applications.

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      • Properties
        • Categories
          High Purity Materials
          CAS Number
          12441-73-5
          Molecular Formula
          Bi4Ti3O12
          Other Properties
          Composition: Bismuth Titanate (Bi4Ti3O12)
          Purity: 99.9%
          Max. dia. of flat disc sputter target: 6"
          Typical lead time of Bi4Ti3O12 sputtering target: 5 weeks

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