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Overview
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Tungsten selenide (WSe2) is a layered semiconductor belonging to the family of transition metal dichalcogenides (TMDs). It has a hexagonal crystal structure and exhibits unique electronic and optical properties. Thin films of WSe2 can be deposited using sputtering techniques, allowing for the fabrication of high-quality and uniform layers. Sputtered WSe2 films have garnered significant attention for their potential applications in optoelectronics and electronics. The layered nature of WSe2 enables the formation of atomically thin films with excellent carrier mobility and strong light-matter interactions. These properties make WSe2 suitable for the development of high-performance photodetectors, light-emitting diodes (LEDs), and transistors. Moreover, the ability to tune the electronic properties of WSe2 through layer thickness control and chemical doping has opened up new possibilities for the fabrication of novel electronic and optoelectronic devices. The deposition of WSe2 by sputtering has greatly advanced the study and application of this fascinating material in various technological fields.
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Overview