Thulium Oxide (Tm2O3) Sputtering Targets

Thulium oxide, with the chemical formula Tm2O3, is a rare-earth oxide known for its cubic crystal structure and wide bandgap. It exhibits excellent thermal stability and has attracted attention for its potential use in various electronic and optical applications. Thin films of Tm2O3 can be prepared using sputtering techniques, enabling the deposition of high-quality layers with precise control over composition and thickness. These sputtered Tm2O3 films have been explored for their use as high-k dielectrics in microelectronic devices, particularly in metal-oxide-semiconductor (MOS) structures. The wide bandgap and good insulating properties of Tm2O3 make it a promising candidate for gate dielectric applications, where it can enhance the performance and reliability of transistors. Additionally, thulium oxide has been investigated as a dopant in other oxide materials to modify their optical and electronic properties, opening up new possibilities for the development of advanced functional materials. The ability to deposit Tm2O3 by sputtering has greatly facilitated the study and application of this material in various fields.

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