Germanium Telluride (GeTe) Sputtering Target

Germanium Telluride (GeTe) Sputtering Target

Catalog Number:
ST01502705QSA
Mfr. No.:
DPTE32ST
Price:
$864
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      • Overview
        • Germanium Telluride (GeTe) is a phase-change material used in non-volatile memory technologies, such as phase-change random access memory (PCRAM). It exhibits fast and reversible switching between amorphous and crystalline states. Thin films of GeTe can be deposited using sputtering, providing the necessary material properties for high-performance memory devices.

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      • Properties
        • Categories
          High Purity Materials
          CAS Number
          12025-39-7
          Molecular Formula
          GeTe
          Other Properties
          Composition: GeTe
          Purity: 99.95%
          Max. dia. of flat disc sputter target: 12"
          Typical lead time of GeTe sputtering target: 4 weeks

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