Aluminum Nitride (AlN) substrate

Aluminum nitride (AlN) substrates offer notable properties for the electronics industry. AlN substrates feature a high thermal conductivity, reaching over 200 W/mK, which is beneficial for devices that generate significant heat and require effective heat dissipation. These substrates also provide strong electrical insulation, with a volume resistivity greater than 1013 ohm cm, allowing them to operate reliably at elevated temperatures without the risk of unwanted electrical conduction.
With a dielectric constant close to 9 at 1MHz and a low dielectric loss of 3.8×10-2, AlN substrates maintain their insulating capabilities over a broad frequency range. This characteristic makes them suitable for applications involving radio frequencies. They can withstand high electric fields with an electric strength of 17 KV/mm, which means they can be used in environments with high voltage levels without breaking down.
AlN substrates exhibit a thermal expansion rate (4.6×10-6/C) ,compatible with silicon, which minimizes mechanical stress due to temperature changes. This compatibility is crucial for electronic substrates that require dimensional stability to preserve the integrity and function of the components over time.
In practical applications, AlN substrates are commonly employed in the foundation of power semiconductors, LED devices, and electric circuits that need to manage heat effectively. Their ability to conduct heat and resist electrical and thermal stresses makes them a reliable choice for various electronic applications.
Aluminum Nitride Substrate Packaging
As a ceramic material, AlN material is quite fragile in a lot of cases. The aluminum substrates are usually hold in plastic bags by vacuum, and protect with heavy foam.

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